preliminary n otice : this is no t a final spe cifica tion . s om e param etric lim its are su bject to cha nge. mar. 2001 mitsubishi hvigbt modules CM400HB-90H high power switching use insulated type i c ................................................................... 400a v ces ....................................................... 4500v insulated type 1-element in a pack application inverters, converters, dc choppers, induction heating, dc to dc converters. CM400HB-90H outline drawing & circuit diagram dimensions in mm circuit diagram c g e cc e e c g 3 - m4 nuts 4 - m8 nuts c e cm e c e label 40 28 57 0.25 57 0.25 140 114 130 18 61.5 5.2 40 15 29.5 48.8 124 0.25 20 10.65 10.35 5 38 6 - 7mounting holes 2nd-version hvigbt (high voltage insulated gate bipolar transistor) modules hvigbt modules (high voltage insulated gate bipolar transistor modules)
preliminary n otice : this is no t a final spe cifica tion . s om e param etric lim its are su bject to cha nge. mar. 2001 mitsubishi hvigbt modules CM400HB-90H high power switching use insulated type v v v ce = v ces , v ge = 0v v ge = v ges , v ce = 0v t j = 25 c t j = 125 c v cc = 2250v, i c = 400a, v ge = 15v v cc = 2250v, i c = 400a v ge1 = v ge2 = 15v r g = 22.5 ? resistive load switching operation i e = 400a, v ge = 0v i e = 400a, die / dt = ?00a / s (note 1) junction to case, igbt part junction to case, fwdi part case to fin, conductive grease applied i c = 40ma, v ce = 10v i c = 400a, v ge = 15v (note 4) v ce = 10v v ge = 0v collector cutoff current gate-emitter threshold voltage gate-leakage current collector-emitter saturation voltage input capacitance output capacitance reverse transfer capacitance total gate charge turn-on delay time turn-on rise time turn-off delay time turn-off fall time emitter-collector voltage reverse recovery time reverse recovery charge thermal resistance contact thermal resistance collector-emitter voltage gate-emitter voltage maximum collector dissipation junction temperature storage temperature isolation voltage mounting torque mass v ge = 0v v ce = 0v t c = 25 c pulse (note 1) t c = 25 c pulse (note 1) t c = 25 c, igbt part charged part to base plate, rms, sinusoidal, ac 60hz 1min. main terminals screw m8 mounting screw m6 auxiliary terminals screw m4 typical value collector current emitter current 4500 20 400 800 400 800 4300 ?0 ~ +125 ?0 ~ +125 6000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 1.5 maximum ratings (tj = 25 c) symbol item conditions unit ratings v v a a a a w c c v n? n? n? kg v ces v ges i c i cm i e (note 2) i em (note 2) p c (note 3) t j t stg v iso min typ max 8 0.5 3.90 2.40 2.40 6.00 1.20 5.20 1.80 0.023 0.045 ma a nf nf nf c s s s s v s c k/w k/w k/w 3.00 3.30 72 5.3 1.6 3.6 4.00 160 0.015 i ces i ges c ies c oes c res q g t d (on) t r t d (off) t f v ec (note 2) t rr (note 2) q rr (note 2) r th(j-c)q r th(j-c)r r th(c-f) electrical characteristics (tj = 25 c) symbol item conditions v ge(th) v ce(sat) limits unit 6.0 4.5 note 1. pulse width and repetition rate should be such that the device junction temp. (t j ) does not exceed t jmax rating. 2. i e , v ec , t rr , q rr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. 3. junction temperature (t j ) should not increase beyond 125 c. 4. pulse width and repetition rate should be such as to cause negligible temperature rise. 7.5 2nd-version hvigbt (high voltage insulated gate bipolar transistor) modules hvigbt modules (high voltage insulated gate bipolar transistor modules)
preliminary n otice : this is no t a final spe cifica tion . s om e param etric lim its are su bject to cha nge. mar. 2001 mitsubishi hvigbt modules CM400HB-90H high power switching use insulated type 2nd-version hvigbt (high voltage insulated gate bipolar transistor) modules performance curves 10 0 23 10 1 5710 0 23 5710 1 23 5710 2 10 2 7 5 3 2 10 1 7 5 3 2 7 5 3 2 10 1 capacitance vs. v ce ( typical ) capacitance c ies , c oes , c res ( nf ) collector-emitter voltage v ce ( v ) v ge = 0v, t j = 25 c c ies, c oes : f = 100khz c res : f = 1mhz output characteristics ( typical ) collector current i c ( a ) transfer characteristics ( typical ) collector current i c ( a ) gate-emitter voltage v ge ( v ) collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( a ) free-wheel diode forward characteristics ( typical ) emitter current i e ( a ) emitter-collector voltage v ec ( v ) collector-emitter saturation voltage characteristics ( typical ) 16 5 4 3 2 10 2 10 4 7 5 3 2 10 3 7 5 3 2 7 5 3 2 10 1 t j =25 c 800 400 200 0 10 0 2468 600 0 8 6 4 2 0 200 400 600 800 v ge =15v t j = 25 c t j = 125 c 800 400 200 0 600 20 0481216 v ce =10v t j = 25 c t j = 125 c collector-emitter saturation voltage v ce(sat) ( v ) 020 16 12 8 4 10 8 6 4 2 0 collector-emitter saturation voltage v ce(sat) ( v ) gate-emitter voltage v ge ( v ) collector-emitter saturation voltage characteristics ( typical ) t j = 25 c t j =25 c
preliminary n otice : this is no t a final spe cifica tion . s om e param etric lim its are su bject to cha nge. mar. 2001 mitsubishi hvigbt modules CM400HB-90H high power switching use insulated type 2nd-version hvigbt (high voltage insulated gate bipolar transistor) modules 4000 3000 0 1000 2000 7 5 3 2 710 2 10 1 7 23 5710 3 23 5 5 3 2 10 0 5 7 5 3 2 710 2 10 1 7 23 5710 3 23 5 5 5 3 2 10 0 5 v cc = 2250v, v ge = 15v r g = 22.5 ? , t j = 125 c inductive load half-bridge switching characteristics ( typical ) switching times ( s ) collector current i c ( a ) v cc = 2250v, t j = 125 c inductive load v ge = 15v, r g = 22.5 ? reverse recovery characteristics of free-wheel diode ( typical ) reverse recovery time t rr ( s ) emitter current i e ( a ) reverse recovery current i rr ( a ) 7 5 3 2 10 1 7 5 3 2 10 2 10 1 10 3 10 2 10 3 10 2 10 1 10 0 7 5 3 2 10 1 7 5 3 2 10 0 10 1 7 5 3 2 23 57 23 57 23 57 single pulse t c = 25 c r th(j c) = 0.023k/ w transient thermal impedance characteristics ( igbt part ) normalized transient thermal impedance z th(j c) time ( s ) 10 2 10 3 10 2 10 1 10 0 7 5 3 2 10 1 7 5 3 2 10 0 10 1 7 5 3 2 23 57 23 57 23 57 normalized transient thermal impedance z th(j c) time ( s ) transient thermal impedance characteristics ( fwdi part ) 20 16 12 8 4 0 v ge ?gate charge ( typical ) gate-emitter voltage v ge ( v ) gate charge q g ( nc ) v cc = 2250v i c = 400a single pulse t c = 25 c r th(j c) = 0.045k/ w
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